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| STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 Applications TO-247 High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESHTM process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW30NC60KD Package TO-247 Packaging Tube Order code STGW30NC60KD March 2008 Rev 2 1/14 www.st.com 14 Contents STGW30NC60KD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGW30NC60KD Electrical ratings 1 Electrical ratings Table 2. Symbol VCES IC IC (1) (1) Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25 C Collector current (continuous) at TC = 100 C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 C Surge non repetitive forward current tp = 10 ms sinusoidal Total dissipation at TC = 25 C Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125C, RG = 10 , VGE = 12 V Operating junction temperature Value 600 60 28 125 125 20 30 120 200 10 - 55 to 150 Unit V A A A A V A A W s C ICL(2) ICP(3) VGE IF IFSM PTOT tscw Tj 1. Calculated according to the iterative formula: T J ( MAX ) - T c I c ( T c ) = ------------------------------------------------------------------------------------R thj - c x V CE ( sat ) ( MAX ) ( T c ,I c ) 2. Vclamp = 80%,(VCES), Tj =150C, RG = 10 , VGE = 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case IGBT max. Thermal resistance junction-case diode max. Thermal resistance junction-ambient max Value 0.625 1.5 50 Unit C/W C/W C/W 3/14 Electrical characteristics STGW30NC60KD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)CES Static Parameter Test conditions Min. 600 2.1 1.9 150 1 4.5 6.5 100 15 2.7 Typ. Max. Unit V V V A mA V nA S Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) Collector-emitter saturation voltage Collector cut-off current (VGE = 0) Gate threshold voltage Gate-emitter cut-off current (VCE = 0) Forward transconductance VGE= 15 V, IC= 20 A VGE= 15 V, IC= 20 A, TC= 125 C VCE = 600 V VCE = 600 V, TC= 125 C VCE= VGE, IC= 250 A VGE= 20 V VCE = 15 V , IC = 20 A VCE(sat) ICES VGE(th) IGES gfs (1) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2170 230 46 96 18 46 Max. Unit pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 480 V, IC = 20 A, VGE = 15 V (see Figure 18) 4/14 STGW30NC60KD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 480 V, IC = 20 A , RG=10 VGE= 15 V, (see Figure 17) VCC = 480 V, IC = 20 A , RG=10 VGE= 15 V, TC= 125 C (see Figure 17) VCC = 480 V, IC = 20 A , RG=10 VGE= 15 V, (see Figure 17) Vcc = 480 V, IC = 20 A, , RG = 10 VGE = 15 V TC= 125 C (see Figure 17) Min. Typ. 29 12 1520 27 14 1360 36 120 85 75 160 130 Max Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 7. Symbol Eon Eoff (1) Ets Eon Eoff (1) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 480 V, IC = 20 A RG= 10 VGE= 15 V, , (see Figure 17) VCC = 480 V, IC = 20 A , RG= 10 VGE= 15 V, TC= 125 C (see Figure 17) Min Typ. 350 435 785 590 845 1435 Max Unit J J J J J J 1. Turn-off losses include also the tail of the collector current. 5/14 Electrical characteristics STGW30NC60KD Table 8. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 20 A IF = 20 A, TC = 125 C IF = 20 A,VR = 50 V, di/dt = 100 A/s (see Figure 20) IF = 20 A,VR = 50 V, TC =125 C, di/dt = 100 A/s (see Figure 20) Min. Typ. 2.6 1.6 40 50 2.5 80 180 4.5 Max. 3.1 Unit V V ns nC A ns nC A 6/14 STGW30NC60KD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations 7/14 Electrical characteristics Figure 8. 1,15 VGE(th) (norm.) 1.05 STGW30NC60KD Figure 9. Collector-emitter on voltage vs collector current Normalized gate threshold voltage vs temperature IC = 250 A 0.95 0.85 0.75 -75 -25 25 75 125 TC (C) 175 Figure 10. Normalized breakdown voltage vs temperature 1,10 V(BR)CES (norm.) IC = 1 mA 1.05 Figure 11. Switching losses vs temperature 1.00 0.95 0.90 -75 -25 25 75 125 TC (C) 175 Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14 STGW30NC60KD Figure 14. Thermal Impedance Electrical characteristics Figure 15. Turn-off SOA Figure 16. Forward voltage drop versus forward current IFM(A) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 Tj=25C (Maximum values) Tj=125C (Typical values) Tj=125C (Maximum values) VFM(V) 9/14 Test circuit STGW30NC60KD 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Test circuit for inductive load switching Figure 19. Switching waveforms Figure 20. Diode recovery times waveform 10/14 STGW30NC60KD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGW30NC60KD TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/14 STGW30NC60KD Revision history 5 Revision history Table 9. Date 24-Oct-2007 07-Mar-2008 Document revision history Revision 1 2 Initial release Updated Figure 15: Turn-off SOA Changes 13/14 STGW30NC60KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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